Beta-Ga2O3 power semiconductor: material properties, doping and devices

Abstract

Doping and heterojunction engineering are essential to modern semiconductor technologies, enabling them to have impressive performances. N-type and P-type doping introduce electrons and holes into semiconductor crystals, which are the basis for many electronic devices. Over the years,researchers have achieved precise control of doping in common materials like silicon, but new challenges have emerged with novel materials and nanoscale devices. For instance, some wide-bandgap materials show intrinsic resistance to being doped. At the same time heterojunctions, interfaces between different semiconductor materials, have revolutionized efficiently. The purpose of this paper is to synthesize recent advances and persisting challenges in n-type doping, p-type doping, and semiconductor heterojunctions. Highlighting how improved doping techniques and clever material combinations are addressing these challenges, and providing suggestions for further research. The main conclusion is that while enormous progress has been made -from stabilizing n-type doping in organic films to designing lattice-matched heterostructures for minimal defectsfurther innovation in doping methods remains crucial.