In the era of rapidly advancing technology, the limitations of conventional memory architectures have become a significant bottleneck in meeting the growing demands for data storage and processing. Emerging non-volatile memory technologies are increasingly closing the performance gap between traditional memory and storage solutions, driving innovations in memory cell design. This review provides an overview of conventional memory types, such as static random-access memory (SRAM), dynamic random-access memory (DRAM), and Flash memory, alongside emerging prototype memories like resistive random-access memory (RRAM), magnetoresistive random-access memory (MRAM), and phase-change memory (PCM). Emerging technology nowadays have a wide range of applications. Resistive random-access memory and spin torque transfer random access memory are the most promising memory for in-memory computing which is advanced beyond conventional von Neumann system, neuromorphic computing mimic human’s brain structure. Internet of things devices and wireless sensor devices make use of the low power consumption memory, and the security is provided by the stochasticity nature of random-access memory which is not desired and is considered as a challenge for memory cell.
