In today’s scientific and technological development, the semiconductor industry is one of the key topics that can make its rapid development, whether it is a vehicle such as automobiles, aircraft or mobile phones, computers such as the daily need of electronic equipment, are inseparable from semiconductors. The research theme of this paper is to analyze the possible development direction of future semiconductors based on the characteristics of existing new semiconductors. The research method of this paper is to collect the structure and property data of GaN and SiC, and then compare these data with the previous Si semiconductors to find the reasons why GaN and SiC can replace the previous semiconductors. The study found that although GaN and SiC are respectively inferior to Si in some aspects, such as SiC’s lower electron mobility than Si, they can both work in environments that Si cannot withstand and are better than Si as a whole.
