The development status and future of the field effect transistor

Authors

  • Zhibo Yang Author
  • Jizhou Wu Author

DOI:

https://doi.org/10.61173/h7kbvb88

Keywords:

Field Effect Transistors, Working principle of FETs, Projection of future developments

Abstract

FET is short for Field Effect Transistor (FET). There are two main types: Junction FET-JFET and metal-oxide
Semiconductor FETs (MOS-FETs). Conduction by the majority of carriers, also known as a monopolar transistor. It
is part of voltage controlling semiconductor device. With the advantages of high input resistance (107 ~ 1015 Ω), low
noise, low power consumption, extensive dynamic range, easy integration, no secondary breakdown phenomenon, and
wide safe working area, it has become a strong competitor of bipolar transistors and power transistors

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Published

2023-06-01

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Section

Articles